kirk effect
The effect of gate voltage on hot-carrier induced degradation in drain extended high- ... On the other hand, Kirk effect induced increase in drain avalanche hot. , 其實這個就是經典的"Kirk-Effect"，造成double peak的主要原因就是隨著Vg的升高，柵極控制的溝道內強電場移動到溝道外的N+邊緣導致的。
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 kirk effect 相關參考資料
Bipolar Junction Transistors
Base and collector transit time effects. 5.5.1. ... Base transit time in the presence of a built-in field 5.5.3. Base transit time under high injection 5.5.4. Kirk effect ... https://ecee.colorado.edu Effects of gate bias on hot-carrier reliability in drain extended metal ...
The effect of gate voltage on hot-carrier induced degradation in drain extended high- ... On the other hand, Kirk effect induced increase in drain avalanche hot. http://ir.lib.ncku.edu.tw HV的結構與原理–DDDMOS or LDMOS? - 每日頭條
其實這個就是經典的"Kirk-Effect"，造成double peak的主要原因就是隨著Vg的升高，柵極控制的溝道內強電場移動到溝道外的N+邊緣導致的。 https://kknews.cc Kirk Effect - Scribd
Documents Similar To Kirk Effect. MR35_50 Brochure Jp-En. Uploaded by. Xanti Zabala Da Rosa. Tema3_Ric.pdf. Uploaded by. Inanjaanpa Nosotros. https://www.scribd.com Kirk effect and suppression for 20 V planar active-gap LDMOS
Then the n-drift concentration can be increased to decrease the Kirk effect, while keeping off-state breakdown voltage Vbd unchanged. Meanwhile the influence ... http://www.jos.ac.cn Kirk effect limitations in high voltage IC's - IEEE Xplore
Symposium on Power Semiconductor Devices & IC's, Davos, Switzerland May 31 - Junle 2. 1994. Kirk effect limitations in High Voltage IC's. A.W. Ludikhuize. https://ieeexplore.ieee.org 第一章簡介 - 電子工程系
Kirk 效應是基極區寬度隨著集電極電流（射極電流）的增大而變 ... 為了減弱Kirk 效應，需要增大集電區（即磊晶層）的摻雜濃度 .... 我們推測也是Kirk Effect 產生的主要. http://140.128.87.3 電源nLDMOS 元件源汲極工程探討研究A Study of SourceDrain ...
[1][3]，其結構可用以預防Kirk effect 的產生並且. 增加nLDMOS 的可靠度問題[4]。此結構使用高劑. 量的離子植入方式，改善nLDMOS 的可靠度問. 題。另外源極工程 ... http://ir.lib.ksu.edu.tw 高電壓矽金氧半電晶體可靠度之研究與模型建立
一個峰值在Vgs 為4 V 時，此特性與一般的. 金氧半場效電晶體(MOSFET)類似，而當Vgs. > 8 V，Isub 由於Kirk effect 會再次增加. [4][16]，第二個Isub ... http://www.etop.org.tw |