poly contact via
如同金屬，polysilicon在半導體製程可應用為poly line (導線)，poly contact via或作為電容的材料，由於不像金屬容易diffuse，通常運用在前段製程取代金屬材料。 ,Poly-si (LPCVD). BPSG(APCVD). SiO2(LPCVD). Ta2O5(sputter, CVD). SiO2(熱氧化), Si3N4(LPCVD). SiO2(熱氧化) via contact. Metal-1. Metal-2. PMOS. NMOS ...
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 poly contact via 相關參考資料
請問半導體製程中via和contact的意義是什麼| Yahoo奇摩知識+
看左圖就好，這跟蝕刻沒有關係，contact 與via 是layer 的名稱，就是各層次的名稱，如左圖的最下方是substrate，就是我們的wafer，然後長poly， ... https://tw.answers.yahoo.com 半導體製程分為poly及metal,請問poly包括哪些步驟| Yahoo奇摩知識+
如同金屬，polysilicon在半導體製程可應用為poly line (導線)，poly contact via或作為電容的材料，由於不像金屬容易diffuse，通常運用在前段製程取代金屬材料。 https://tw.answers.yahoo.com IC 製程簡介
Poly-si (LPCVD). BPSG(APCVD). SiO2(LPCVD). Ta2O5(sputter, CVD). SiO2(熱氧化), Si3N4(LPCVD). SiO2(熱氧化) via contact. Metal-1. Metal-2. PMOS. NMOS ... http://www.topchina.com.tw Istfa 2005: Proceedings of the 31st International Symposium ...
This paper describes gate oxide defect localization and analysis using Passive ... the PVC image of the contact/via connected to poly gate will become brighter. https://books.google.com.tw The Electronics Handbook - 第 720 頁 - Google 圖書結果
... diffusion or implant Poly mask p-select, n-select Simpler contact to poly Denser contact to poly Simpler contact to active Denser contact to active Metal 1 via ... https://books.google.com.tw Microelectronics - Google 圖書結果
+n, p+ active diffusion or implant Poly mask p-select, n-select Simpler contact to ... contact to poly Simpler contact to active Denser contact to active Metal 1 via ... https://books.google.com.tw Handbook of Digital CMOS Technology, Circuits, and Systems
Review that no multi-level contact vias are attempted. That is to say, Metal2 only contacts Metal1 and Metal3, but cannot contact poly or via to Metal4. Note some ... https://books.google.com.tw Poly-SiGe for MEMS-above-CMOS Sensors - 第 95 頁 - Google 圖書結果
4.19 Top: pictures of the new 3×3μm2 contacts after oxide etch. Bottom: Top (left) and Cross-section (right) pictures of a 3×3μm2 contact via filled with 500nm ... https://books.google.com.tw Role of polysilicon in poly-SiSiOx passivating contacts for ...
After saw-damage etching using KOH, a silicon oxide layer with a thickness of 1.2 nm was grown on the wafer surface via wet chemical oxidation using H2O2. https://pubs.rsc.org Laser contact openings for local poly-Si-metal contacts ...
The highest efficiency using a poly-Si/SiO x passivating contact is 26.1% with a back contact POLO structure, which was reported by Institute for Solar Energy ... https://www.researchgate.net |