hot carrier substrate current
In MOSFETs, hot electrons have sufficient energy to tunnel through the thin gate oxide to show up as gate current, or as substrate leakage current. In a ... ,由 N Ghobadi 著作 · 2010 · 被引用 4 次 — In this paper, the Hot Carrier Injection (HCI) characteristic for a triple gate bulk FinFET is investigated through modeling the HCI generated substrate ...
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 hot carrier substrate current 相關參考資料
5.1 Hot Carrier Degradation
Hot carriers are particles that attain a very high kinetic energy from being accelerated by a high electric field. https://www.iue.tuwien.ac.at Hot-carrier injection
In MOSFETs, hot electrons have sufficient energy to tunnel through the thin gate oxide to show up as gate current, or as substrate leakage current. In a ... https://en.wikipedia.org Modeling of Hot Carrier induced substrate current and ...
由 N Ghobadi 著作 · 2010 · 被引用 4 次 — In this paper, the Hot Carrier Injection (HCI) characteristic for a triple gate bulk FinFET is investigated through modeling the HCI generated substrate ... https://ieeexplore.ieee.org Evaluating Hot Carrier Induced Degradation of MOSFET ...
In the hot carrier effect, carriers are accelerated by the channel electric fields and become trapped in the oxide. These trapped charges cause time dependent ... https://www.tek.com Substrate Current Independent Hot Carrier Degradation in ...
This paper focuses on understanding anomalous hot carrier results obtained from an NLDMOS transistor whose drain drift implant dose was varied. http://ieeexplore.ieee.org Hot Carrier Injection - an overview
Some carriers go into the substrate, causing an increase in substrate current, and the small fraction has enough energy to cross the oxide barrier and cause ... https://www.sciencedirect.com 6. Hot-Carrier Reliability Modeling
The next type, the substrate hot-carrier generation, is based on carriers injected from the substrate. These carriers are accelerated towards the gate and are ... https://www.iue.tuwien.ac.at Chapter 3 Hot-Carrier Effects
由 C HU 著作 · 1989 · 被引用 65 次 — The substrate current [2], if unchecked, can overload the substrate-bias gen erator, cause (local) substrate potential fluctuations or electron injection into ... https://www.sciencedirect.com Channel Hot-Carrier Effect of 4H-SiC MOSFET Liangchun Yu
由 L Yu 著作 · 2009 · 被引用 16 次 — For silicon nMOSEFT, the standard hot-carrier stress is the maximum substrate current condition (. VG ~ ½ VD). In a SiC MOSFET, a search for peak substrate ... https://tsapps.nist.gov |