hot carrier effect
When carriers (electrons or holes) gain high kinetic energy due to the presence of high electric field within a semiconductor device. Hot ...,The effects of hot carrier injection on C-V and I-V characteristics in MOS structures are discussed. The charge trapping and generation of interface states caused ...
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 hot carrier effect 相關參考資料
2.4 Hot Carrier Effects - IuE, TU Wien
2.4 Hot Carrier Effects. If a MOS transistor is operated under pinch-off condition, also known as ``saturated case'', hot carriers traveling with saturation velocity ... http://www.iue.tuwien.ac.at Hot Carrier Effect (HCE) | allthingsvlsi
When carriers (electrons or holes) gain high kinetic energy due to the presence of high electric field within a semiconductor device. Hot ... https://allthingsvlsi.wordpres Hot carrier effect—model, mechanism and effects on C-V and I-V ...
The effects of hot carrier injection on C-V and I-V characteristics in MOS structures are discussed. The charge trapping and generation of interface states caused ... https://www.sciencedirect.com Hot Carrier Injection - EESemi.com
The term 'hot carrier effects', therefore, refers to device degradation or instability ... These are 1) the drain avalanche hot carrier injection; 2) the channel hot ... https://eesemi.com Hot-Carrier Effects - ScienceDirect
Chapter 3 - Hot-Carrier Effects ... 14: C. Hu, Hot-electron effects in MOSFET's Tech. Dig. .... and minority carrier generation mechanism due to hot-carrier effects. https://www.sciencedirect.com Hot-carrier effects in scaled MOS devices - ScienceDirect
A universal guideline and state-of-the-art hot-carrier effects in scaled MOSFETs are reviewed and discussed from the viewpoints of 1) DC and AC hot-carrier ... https://www.sciencedirect.com Hot-carrier injection - Wikipedia
跳到 Effects on transistors - Attempts to correct or compensate for the hot electron effect in a MOSFET may involve locating a diode in reverse bias at gate ... https://en.wikipedia.org 何謂hot - carrier degradation?? | Yahoo奇摩知識+
而hot carrier effect 以NMOS 來說，當元件在操作時，比如一個5伏特的元件好了，閘極和汲極的電壓都是給5V，閘極下的區域是p-type，而汲極的 ... https://tw.answers.yahoo.com 熱載子注入- 維基百科，自由的百科全書 - Wikipedia
熱載子注入（英語：Hot carrier injection, HCI）是固態電子器件中發生一個現象，當電子或電洞獲得足夠的動能後，它們就能夠突破勢壘的約束。這裡「熱」這個術語是指 ... https://zh.wikipedia.org |