latch up v trigger
trigger PNPN Thyristors and may cause Latch-Up. Latch-Up is not a risk if the voltage ... individual PMOS and NMOS transistors, diodes or substrate resistors. ,Index Terms—Holding voltage, latchup, silicon controlled rec- tifier (SCR) ... stimuli have been found to probably trigger on TLU [9]–[11]. The first developed ... of the parasitic pnp (or npn) bipolar junction transistor (BJT). However, TLU issue ..
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 latch up v trigger 相關參考資料
Latch-up - Wikipedia
A latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically ... A common cause of latch-up is a positive or negative voltage spike on an input ... High-power... https://en.wikipedia.org Latch-Up White Paper - Texas Instruments
trigger PNPN Thyristors and may cause Latch-Up. Latch-Up is not a risk if the voltage ... individual PMOS and NMOS transistors, diodes or substrate resistors. https://www.ti.com Physical Mechanism and Device Simulation on Transient ...
Index Terms—Holding voltage, latchup, silicon controlled rec- tifier (SCR) ... stimuli have been found to probably trigger on TLU [9]–[11]. The first developed ... of the parasitic pnp (or npn) bipola... http://www.ics.ee.nctu.edu.tw [摘要] 在smart power technology中，高壓 (high-voltage, HV) 電 ...
因此，在如此惡劣工作環境下所引發的栓鎖 (latch-up) 現象對於在靜電放電 ... 也就是說靜電放電防護元件的觸發電壓 (trigger voltage, Vt1) 必須比內部電路的崩潰 ... http://www.ics.ee.nctu.edu.tw 博碩士論文行動網 - 全國博碩士論文資訊網
論文摘要閂鎖效應(Latchup)是CMOS積體電路(IC)產品的設計上一項常見的問題， ... in 0.6-um 40-V BCD process to pass the test for at least 500-mA trigger current ... https://ndltd.ncl.edu.tw 國立交通大學 - 交大307 實驗室
verified in 0.6-um 40-V BCD process to pass the test for at least 500-mA trigger current which shows high negative-current-latch-up immunity without overstress ... http://www.ics.ee.nctu.edu.tw 系統層級靜電放電測試所引發之暫態觸發閂鎖效應 ... - 交通大學
(Transient-Induced Latchup, TLU)，其物理形成機制可利用元件模擬(Device Simulation)方法並配合. 實際晶片測量結果來清楚 ... 原來的額定操作電壓(+2.5V)，同時並產生“掃回＂電流(ISb)，進 ... latch-up using an improved bi-polar trigger,” in Proc. http://www.ics.ee.nctu.edu.tw 避免高壓積體電路發生閉鎖效應或類似閉鎖效應之 ... - 交通大學
電放電防護元件在正常工作操作下，可能造成的閉鎖效應(Latchup)或類似閉鎖效 ... 文獻[14]。高壓GGNMOS 元件在第一段的觸發電壓(Trigger Voltage)為27.2 V (在. http://www.ics.ee.nctu.edu.tw 闩锁效应（latch up）
trigger current（引发latch up 的电流)最大,最不容易发生latch up 但是不能太薄， ... Z.l,- s/v. 不能满足，晶体管将无法工作。 芯片,设计,版图,晶圆制造,工艺,制程,封装, ... https://e2echina.ti.com |