cf4 plasma etching
由 OV Balachova 著作 · 2000 · 被引用 32 次 — CF4 plasma etching of materials used in microelectronics manufacturing ... The best etch rate ratios of Si and SiO2 to carbon films were achieved at low RF ... ,由 SH Shin 著作 · 1998 — Reactive ion etching(RIE) of Ta-A1 alloy thin film with the thickness of 1000 A was studied. It was confirmed that CF4 gas could be effectively used to etch the ...
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 cf4 plasma etching 相關參考資料
(PDF) Plasma Etching of Si and SiO2—The Effect of Oxygen ...
In the present work, we study a CF 4 /O 2 mixture plasma. Tetrafluoromethane (CF 4 ) is one of the most frequently used gases for the generation of F atoms. https://www.researchgate.net CF4 plasma etching of materials used in microelectronics ...
由 OV Balachova 著作 · 2000 · 被引用 32 次 — CF4 plasma etching of materials used in microelectronics manufacturing ... The best etch rate ratios of Si and SiO2 to carbon films were achieved at low RF ...... https://www.sciencedirect.com CF4 Plasma Etching of Ta−Al Alloy Thin Films - Science Direct
由 SH Shin 著作 · 1998 — Reactive ion etching(RIE) of Ta-A1 alloy thin film with the thickness of 1000 A was studied. It was confirmed that CF4 gas could be effectively used to etch the ... https://www.sciencedirect.com Mechanism of silicon etching by a CF4 plasma - AVS: Science ...
由 JL Mauer 著作 · 1978 · 被引用 136 次 — The mechanisms for the reactive ion etching of silicon by CF4 plasma are investigated. A model is proposed whereby silicon is etched by chemical reaction ... https://avs.scitation.org Plasma etching of Si and SiO2—The effect of oxygen ...
由 CJ Mogab 著作 · 1978 · 被引用 751 次 — The plasma etching of silicon and silicon dioxide in CF4‐O2 mixtures has been studied as a function of feed‐gas composition in a 13.56‐MHz plasma generated ... https://aip.scitation.org Role of N2 addition on CF4O2 remote plasma chemical dry ...
由 PJ Matsuo 著作 · 1997 · 被引用 51 次 — Admixing O2 to CF4 increases the gas phase fluorine density and increases the etch rate by roughly sevenfold to a maximum at an O2/CF4 ratio of 0.15. The ... https://avs.scitation.org Silicon etching mechanism and anisotropy in CF4+O2 plasma
由 YH Lee 著作 · 1983 · 被引用 69 次 — For the first time, we were able to estimate the chemical etching and the ion-enhanced etching contributions to total silicon etch rates in the CF4 + O2 plasma. https://aip.scitation.org 國立交通大學機構典藏：CF4 PLASMA-ETCHING ON LINBO3
標題: CF4 PLASMA-ETCHING ON LINBO3. 作者: LEE, CL · LU, CL · 交大名義發表 · 電控工程研究所 · National Chiao Tung University https://ir.nctu.edu.tw 蝕刻技術
Relative (ratio) of the etch rate of the film to the mask, substrate, or another film ... etching during plasma etch process ... 有： 可通入CF4、O2等氣體. https://www.sharecourse.net |