hump effect
Depending on the process, hump effect may change the MOS characteristics for negative Bulk-Source Voltage (VBS) and have a slight impact for VBS=0V. To ... ,Analog circuit designs are often biased to work in sub-threshold mode with good gate-source voltage matching performances. Depending on the process, hump ...
| 相關軟體 Etcher 資訊 | |
|---|---|
 hump effect 相關參考資料
(PDF) “Hump” Characteristics and Edge Effects in Polysilicon ...
PDF | Similarly to SOI MOSFETs, the transfer characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) shows often an “hump”... | Find, read ... https://www.researchgate.net Impact of hump effect on MOSFET mismatch in ... - IEEE Xplore
Depending on the process, hump effect may change the MOS characteristics for negative Bulk-Source Voltage (VBS) and have a slight impact for VBS=0V. To ... https://ieeexplore.ieee.org Impact of hump effect on MOSFET mismatch in the sub ...
Analog circuit designs are often biased to work in sub-threshold mode with good gate-source voltage matching performances. Depending on the process, hump ... https://ieeexplore.ieee.org MOSFET layout modifications for hump effect removal ...
A statistics method of parametric measurement enabled the characterization of hump effect. •. With TCAD simulation in three dimensions, hump effect can be put ... https://www.sciencedirect.com Suppression Techniques of Subthreshold Hump Effect ... - JSTS
techniques to suppress subthreshold hump effect for high-voltage (HV) complementary metal-oxide- semiconductor (CMOS) technology are ... http://jsts.org “Hump” characteristics and edge effects in polysilicon ... - Cnr
In crystalline MOSFET and SOI, the hump effect was already been interpreted as an edge effect3 since it has been related to the presence of corners in the active ... http://www.cnr.it 第一章導論 - 國立交通大學機構典藏
一腫起(Hump)現象。當通道寬度變小時，此現象更為明顯，使得元件的. 操作電壓下降。稱逆窄通道效應(Reverse Narrow Width Effect)〔5〕。圓. 化角落（使具有一定的 ... https://ir.nctu.edu.tw |