hot carrier injection temperature
Abstract-The generation of fast interface traps due to channel hot- carrier injection in n-channel MOS transistors is investigated as a function of stress ... ,This paper presents an efficient temperature dependent hot carrier injection reliability simulation flow which is scalable. The flow makes use of some efficient ...
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超薄氮化矽閘極介電層之可靠度研究 - 國立交通大學機構典藏
characterizing its reliability issues including negative-bias-temperature instability. (NBTI) and hot-carrier injection (HCI). The relationships between device ... https://ir.nctu.edu.tw Temperature dependence of the channel hot-carrier ...
Abstract-The generation of fast interface traps due to channel hot- carrier injection in n-channel MOS transistors is investigated as a function of stress ... https://translate.google.com.t An efficient temperature dependent hot carrier injection ...
This paper presents an efficient temperature dependent hot carrier injection reliability simulation flow which is scalable. The flow makes use of some efficient ... https://translate.google.com.t Hot Carrier Injection - an overview | ScienceDirect Topics
C=a constant [40]. Typically the assessment of devices with regard to hot carrier effect will take place at low temperatures (−20 to −70°C) due to the negative activating energy associated with this m... https://www.sciencedirect.com |