Si dry etching gas
For silicon and silicon compounds fluorine and chlorine gases are used primarily. 4. Overview of gases used in dry etching. An etch process is not limited to ... ,Active gases · Fluorine species. SF6, CF4, CHF3, C4F Used mainly for etching silicon based materials and a few metals · Chlorine and bromine species. Cl2, BCl3, ...
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 Si dry etching gas 相關參考資料
Lecture 7 Dry Etching Techniques
Chlorine and Bromine atoms are used in RIE for anisotropic etching of silicon, because these gases can not etch silicon at room temperature without the ... https://fangang.site.nthu.edu. Dry etch processes - Dryetching
For silicon and silicon compounds fluorine and chlorine gases are used primarily. 4. Overview of gases used in dry etching. An etch process is not limited to ... https://www.halbleiter.org Plasma etchingGases
Active gases · Fluorine species. SF6, CF4, CHF3, C4F Used mainly for etching silicon based materials and a few metals · Chlorine and bromine species. Cl2, BCl3, ... https://lnf-wiki.eecs.umich.ed Important gases for Si trench etching with their main ...
[15][16] [17] [18] The RIE of Si is realized by chlorine (Cl) or bromine (Br) species including Ar plasma. 15,16 On the other hand, the RIE of silicon dioxide ( ... https://www.researchgate.net Influence of carbon monoxide gas on silicon dioxide dry ...
由 N Omori 著作 · 1996 · 被引用 19 次 — Abstract. For narrow gap reactive ion etching (RIE) of SiO2 using CF4, CHF3 and Ar chemistry at a pressure range of 30 to 70 Pa, we found that a higher ... https://www.sciencedirect.com Reactive Ion Etching Selectivity of SiSiO2
由 M Zhang 著作 · 被引用 6 次 — Fluorocarbon gases are commonly used for the dry etching of SiO2 or Si. The mechanism of fluorine-based a)Electronic mail: gewatson@seas ... https://core.ac.uk Selective and Anisotropic Dry Etching of Ge over Si
由 MSB Castro 著作 · 2013 · 被引用 10 次 — The challenge of this work was to study the etching of Ge and Si using Cl2, CF4 , SF6, and HBr feed gases by varying pressure and bias power so as to get a ..... https://jics.org.br COMPARISON OF F2-BASED GASES FOR HIGH-RATE ...
由 J Donahue 著作 · 1999 — Four different Fz-based gases (SF6, NF3, PF5, and BF3) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to -8 pm/min were ... https://www.osti.gov Plasma Etching of Silicon Nitride with High Selectivity over ...
Possible overetch in the nitride processing may result in damages of a thin oxide and an underlying Si substrate through imperfections of the oxide. Thus high ... https://www.electrochem.org |