Nitride pull back
A nitride “pull-back” is formed by adding a sidewall oxide to the nitride mask and using the nitride with its sidewall as the mask for etching of silicon shallow ... ,A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed ...
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 Nitride pull back 相關參考資料
A robust shallow trench isolation (STI) with SiN pull-back ...
It is also known that "divot" will degrade the inverse narrow width effect of pass transistor and result in "double hump". In our study, SiN pull-back in STI indeed ... https://www.researchgate.net Beaker shape trench with nitride pull-back for STI - Google ...
A nitride “pull-back” is formed by adding a sidewall oxide to the nitride mask and using the nitride with its sidewall as the mask for etching of silicon shallow ... https://www.google.com Method for moat nitride pull back for shallow trench ... - Google
A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed ... https://www.google.com Method for moat nitride pull back for shallow trench isolation
A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed ... https://patents.google.com Method to improve STI nano gap fill and moat nitride pull back ...
A method of improving shallow trench isolation (STI) gap fill and moat nitride pull back is provided by after the steps of growing a pad oxide, ... https://www.freepatentsonline. US20020086497A1 - Beaker shape trench with nitride pull ...
A nitride “pull-back” is formed by adding a sidewall oxide to the nitride mask and using the nitride with its sidewall as the mask for etching of silicon shallow ... https://patents.google.com US6818526B2 - Method for moat nitride pull back for shallow ...
Moat nitride pull back involves lateral recessing the edge of the moat nitride layer at an isolation trench with a phosphoric acid etch or another suitable process ... https://patents.google.com US6818526B2 - Method for moat nitride pull back for shallow trench ...
A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed ... http://www.google.com 第一章導論 - 國立交通大學機構典藏
因，並優化內墊氧化矽層(Liner Oxide)與內墊氮化矽層(Liner Nitride)之 ... 有時一些製程會故意做收縮(Pull Back)，因內墊氧化矽層沉積時，這地. 方之圓弧角會長的 ... https://ir.nctu.edu.tw |